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| AON4407L P-Channel Enhancement Mode Field Effect Transistor General Description The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20m (VGS = -4.5V) RDS(ON) < 25m (VGS = -2.5V) RDS(ON) < 31m (VGS = -1.8V) ESD Protected! DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G Rg D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 8 -9 -7 -60 2.5 1.6 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol A AD t 10s Steady State Steady State RJA RJL Typ 42 74 25 Max 50 90 30 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-12V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-9A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A VGS=-1.8V, ID=-7.5A VGS=-1.5V, ID=-7A gFS VSD IS Forward Transconductance VDS=-5V, ID=-9A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.35 -60 16.5 22 20 24 29 45 -0.53 -1 -2.5 1740 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 334 200 1.3 19 VGS=-4.5V, VDS=-6V, ID=-9A 4.5 5.3 240 VGS=-4.5V, VDS=-6V, RL=0.67, RGEN=3 IF=-9A, dI/dt=100A/s 580 7 4.2 22 17 27 1.7 23 2100 20 26 25 31 38 -0.5 Min -12 -1 -5 10 -0.85 Typ Max Units V A A V A m m m m S V A pF pF pF k nC nC nC ns ns s s ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/s A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev 0: Aug 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 -ID (A) -ID(A) -2V 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 45 Normalized On-Resistance 40 35 RDS(ON) (m) 30 25 20 15 VGS=-4.5V 10 0 2 4 6 8 10 VGS=-2.5V VGS=-1.8V VGS=-1.5V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) VGS=-1.5V ID=-7A VGS=-1.8V ID=-7.5A VGS=-4.5V ID=-9A VGS=-1.5V -4.5V -3V 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 125C 25C -2.5V 60 50 VDS=-5V I12 14 16 18 20 F=-6.5A, dI/dt=100A/s -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 50 45 40 RDS(ON) (m) -IS (A) 35 30 ID=-9A 1E+01 1E+00 1E-01 125C 1E-02 125C 25C 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1E-03 20 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 OUT OF 15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 1E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4.5 4 3.5 -VGS (Volts) 3 2.5 2 1.5 1 0.5 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 400 Crss 0 0 2 4 6 8 10 12 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-6V ID=-9A Capacitance (pF) 2800 2400 2000 1600 1200 800 Coss Ciss 100 10s 10 -ID (Amps) RDS(ON) limited 1ms 1000 TJ(Max)=150C TA=25C 10ms 1 DC 0.1 TJ(Max)=150C TA=25C 0.1 F 1 -VDS (Volts) 100mss 10s Power (W) 100 10 0.01 0.01 I =-6.5A, dI/dt=100A/s 10 100 1 0.00001 0.001 0.1 10 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to Ambient (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407L Gate Charge Test Circuit & Waveform Vgs Qg -10V VDC VDC DUT Vgs Ig Resistive Switching Test Circuit & Waveforms RL Vds Vgs Vgs Rg DUT VDC Vgs Vds Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Vds - Isd Vgs L VDC Ig Alpha & Omega Semiconductor, Ltd. + + Vdd -Vds - + Charge t on td(on) tr t d(off) t off tf - + - Vds Qgs Qgd Vdd 90% 10% Q rr = - Idt -Isd -I F dI/dt -I RM Vdd www.aosmd.com |
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